Etchant preparation

Abstract

PURPOSE: To stabilize the etching rate of a prepared chemical solution within a short time while enabling the etching rate to be controlled accurately by a method wherein the chemical solution for etchant irradiated with electromagnetic waves in specific wavelength is used for etching a material to be etched to measure the etching rate so that the concentration of the chemical solution may be controlled by the previously measured etching rate between the chemical solution and the material to be etched. CONSTITUTION: A chemical solution for an etchant irradiated with electromagnetic waves 6 in the wavelength of 1-400nm is used for etching a material to be etched to measure the etching rate so that the concentration of the chemical solution may be controlled by the previously measured etching rate between the chemical solution and the material to be etched. At this time, in order to accelerate the measuring time of the etching rate, a specimen in film thickness to be removed within a short time of e.g., one minute and the other specimens having SiO 2 films in thickness at 10Å intervals within the range of 200-300Å are prepared to be immersed in the chemical solution in a tank 6 so that the specimens may be picked up after one minute to check if there is any residual film or not. Later, pure water, stock chemical solution or diluted solution in specified concentration etc., is filled up. Through these procedures, arbitrary concentration can be set up with high precision to facilitate the automatic feeding of the etchant. COPYRIGHT: (C)1990,JPO&Japio

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