Integration-type semiconductor laser

Abstract

PURPOSE: To obtain a semiconductor laser whose output is high and whose noise characteristic is low by a method wherein a layer (light waveguide layer) having a band gap which is larger than an active layer and is smaller than a clad layer is provided so as to come into contact with the active layer of a semiconductor laser. CONSTITUTION: A layer (light waveguide layer) having a band gap larger than an active layer and having the band gap smaller than a clad layer is provided so as to come into contact with all constituent active layers of a semiconductor laser. For example, at a cross section A near an end face of a resonator, a width is narrowed so as to guide a refractive-index beam together with both ridge stripes 209, 210; on the other hand, at a cross section B in the central part of the resonator, a width of one ridge stripe 210 is formed to be sufficiently wide so as to guide a gain beam. Thereby, it is possible to obtain a semiconductor laser whose output can be high and whose noise characteristic is low. COPYRIGHT: (C)1990,JPO&Japio

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